Abstract: Advanced packaging solutions for wide bandgap power devices, such as silicon carbide (SiC) MOSFETs, can help realize their full potential. Additively printed electronics present a promising ...
Abstract: This letter presents a 300-GHz-band power amplifier (PA) module implementing a PA integrated circuit (IC) fabricated in 250-nm indium phosphide (InP) double-heterojunction bipolar transistor ...
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Rig up your Fujifilm GFX ETERNA 55 for superior audio with this new XLR module
While 2025 was dominated by AI discussions (and fears), there were actually some really great bright spots in the traditional ...
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