KAWASAKI, Japan, November 12, 2024--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for ...
In recent years, MOSFETs have benefited from huge investments in technology and promotion alike, overshadowing bipolar devices to the degree that many designers view bipolars as old technology.
A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a fundamental building block of modern electronics. It is a field-effect transistor (FET) where the voltage applied to a terminal (gate) ...
Ikoma, Japan – Scientists from Nara Institute of Science and Technology (NAIST) used the mathematical method called automatic differentiation to find the optimal fit of experimental data up to four ...
Cree Inc., a maker of silicon carbide (SiC) power devices, has introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance ...
A type of metal oxide semiconductor field-effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides ...
High-reliability rad hard MOSFETs undergo extensive screening and quality conformance testing to ensure that devices perform to specification in the harshest environments. For Defense Logistics Agency ...
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